Classical devices employing Si are almost reaching their physical limits and alternatives, based on entirely new materials and principles, are being investigated and slowly penetrate from laboratory to industry. Examples of such new materials, which appear promising to be once used in the semiconducting industry, are two-dimensional (2D) materials and functional molecules due to their small dimensionality, low price, and unique functionalities.This master thesis focuses on techniques to integrate 2D materials and molecular thin films into devices and study their properties. First, a molybdenum disulfide (MoS2)-based field-effect transistor (FET) was fabricated and functionalized with spin-crossover (SCO) nanoparticles (NPs). Effect of SCO NPs on MoS2 electronic properties by switching between two distinct states using an external stimulus was investigated. Second, an integration method of 2D materials into a magnetic tunnel junction (MTJ) was being developed for spintronic applications. Benefits and drawbacks of the chosen method are discussed. Finally, the possibility to integrate thin SCO molecular films into vertical spin-valves directly through their evaporation using a shadow mask was investigated.